專家信息：

吳克輝，男，1973年10月20日出生，福建省閩清縣人，博士�，F(xiàn)任中國(guó)科學(xué)院物理研究所“百人計(jì)劃”研究員，博士生導(dǎo)師。

教育及工作經(jīng)歷：

1991年9月至1995年7月浙江大學(xué)物理系畢業(yè)，獲得理學(xué)學(xué)士學(xué)位。

1995年9月至2000年1月中科院物理研究所凝聚態(tài)物理專業(yè)，博士學(xué)位。

2000年4月至2003年10月日本東北大學(xué)金屬材料研究所，博士后。

2003年11月至2004年10月日本東北大學(xué)金屬材料研究所，助理教授。

2004年10月至今中國(guó)科學(xué)院物理研究所“百人計(jì)劃”研究員，博士生導(dǎo)師、表面9組課題組長(zhǎng)。

培養(yǎng)研究生情況：

已培養(yǎng)畢業(yè)9名博士生并得到良好就業(yè)，目前在讀研究生7名，與高校聯(lián)合培養(yǎng)學(xué)生3名，尚有招生名額空缺。擬每年招收1-2名研究生。課題組實(shí)驗(yàn)條件優(yōu)越、儀器設(shè)備充裕、學(xué)術(shù)氣氛寬松、歡迎報(bào)考。對(duì)于選擇我們的學(xué)生，我們有教無(wú)類，盡心培養(yǎng)。

科學(xué)研究：

主要研究方向：

低溫掃描隧道顯微鏡（STM）/掃描隧道譜（STS），分子束外延手段原位、原子尺度研究新型量子材料的生長(zhǎng)、物性和新奇量子效應(yīng)，目前感興趣的方向有：

1. 新型拓?fù)浣^緣體材料的探索和合成

2. 新型層狀低維材料的合成和奇異量子效應(yīng)

3. qplus型極高分辨非接觸AFM、應(yīng)力調(diào)控STM、低溫強(qiáng)磁場(chǎng)STM技術(shù)的研發(fā)。

承擔(dān)科研項(xiàng)目情況：

作為負(fù)責(zé)人承擔(dān)科技部973課題、基金委重點(diǎn)項(xiàng)目、以及中科院先導(dǎo)B、創(chuàng)新項(xiàng)目、基金委面上項(xiàng)目等多項(xiàng)研究。

1． 中科院三期重要方向性項(xiàng)目：“人造小系統(tǒng)中的新奇量子現(xiàn)象、規(guī)律和器件應(yīng)用”（2006-2010）。

2． 基金委面上項(xiàng)目：“Al/Si二維電子體系的若干物性研究”（2009-2011）。

3． 基金委面上項(xiàng)目：“拓?fù)浣^緣體的表面態(tài)調(diào)控及輸運(yùn)性質(zhì)研究”（2010-2013）。

4． 科學(xué)院方向性項(xiàng)目子課題：“高質(zhì)量拓?fù)浣^緣體樣品制備和新效應(yīng)探索”（2011-2014）。

5． 科技部重大科學(xué)研究計(jì)劃（973）子課題：“新一代高真空掃描探針顯微技術(shù)及光譜技術(shù)的研究”（2007.12-2011.11）。

6． 中國(guó)科學(xué)院知識(shí)創(chuàng)新工程重要方向項(xiàng)目子課題：“低維小系統(tǒng)的受控生長(zhǎng)研究”（2006.12-2010.11）。

7． 國(guó)家自然科學(xué)基金委面上項(xiàng)目：“并五苯與固體表面的作用”（2006.1-2008.12）。

8． 國(guó)家自然科學(xué)基金委重點(diǎn)項(xiàng)目：“硅烯的基礎(chǔ)物理研究”，2013。

9． 973課題：“拓?fù)溆行驊B(tài)及新奇量子效應(yīng)研究”，2012。

科研成果：

過(guò)去幾年中，在新型量子材料的生長(zhǎng)、物性研究方面取得了一系列工作成績(jī)，包括：

(1) 在三維拓?fù)浣^緣體材料的制備和輸運(yùn)性質(zhì)調(diào)控方面進(jìn)行了開(kāi)創(chuàng)性的工作，包括最先采用MBE方法獲得Bi2Se3類拓?fù)浣^緣體單晶薄膜；發(fā)明了采用高介電常數(shù)的鈦酸鍶(STO)襯底生長(zhǎng)拓?fù)浣^緣體薄膜的方法；最先在輸運(yùn)方面利用電場(chǎng)調(diào)控拓?fù)浣^緣體的輸運(yùn)性質(zhì)，并報(bào)道拓?fù)浣^緣體中的輸運(yùn)的反弱局域效應(yīng)；利用擬合α因子來(lái)鑒別拓?fù)漭斶\(yùn)性質(zhì)的方法。

(2)在硅基的二維Dirac電子材料，即硅烯研究方面做出了一系列開(kāi)創(chuàng)性的工作，引起國(guó)際廣泛關(guān)注，其中包括：首先在實(shí)驗(yàn)上獲得硅烯；發(fā)現(xiàn)硅烯中一系列新奇物性，包括線性色散、六角翹曲的Dirac錐、背散射抑制、低溫相變、類超導(dǎo)能隙等。這些結(jié)果對(duì)于開(kāi)辟將傳統(tǒng)的硅工業(yè)與自旋電子學(xué)和量子計(jì)算相結(jié)合的新研究領(lǐng)域有重要意義。

(3) 自主設(shè)計(jì)制作國(guó)產(chǎn)超高真空低溫STM/STS系統(tǒng)，研發(fā)了一系列自有技術(shù)和設(shè)備。目前，研發(fā)的國(guó)產(chǎn)超高真空低溫(4K)STM/STS已經(jīng)產(chǎn)品化上市，填補(bǔ)了國(guó)內(nèi)在高端STM產(chǎn)品上的空白。

發(fā)明專利：

1． 一種基于納米加工技術(shù)的集成微四點(diǎn)探針芯片制作方法 何杰輝; 吳克輝; 羅強(qiáng); 顧長(zhǎng)志; 郭建東 中國(guó)科學(xué)院物理研究所 【中國(guó)專利】中國(guó)科學(xué)院物理研究所 2010-06-16

論文專著：

發(fā)表論文：

共發(fā)表SCI論文70多篇，SCI總引用超過(guò)1600次，第一或通訊作者論文單篇他引超過(guò)100次的5篇。

2015

72. Ordered and Reversible Hydrogenation of Silicene. Jinglan Qiu, Huixia Fu, Yang Xu, A. I. Oreshkin, Tingna Shao, Hui Li, Sheng Meng, Lan Chen and Kehui Wu.  Phys. Rev. Lett. (in press, 2015).

2014

71.Proximity effect between a topological insulator and a magnetic insulator with large.perpendicular anisotropy. Wenmin Yang, Shuo Yang, Qinghua Zhang, Yang Xu, Shipeng Shen, Jian Liao, Jing Teng, Cewen Nan, Lin Gu,Young Sun, Kehui Wu, and Yongqing Li. Appl. Phys. Lett. 105, 092411(2014).

70. Tuning the Band Gap in Silicene by Oxidation.Yi Du, Jincheng Zhuang, Hongsheng Liu, Xun Xu, Stefan Eilers, Kehui Wu, Peng Cheng, Jijun Zhao, Xiaodong Pi, Khay Wai See, Germanas Peleckis, Xiaolin Wang, and Shi Xue Dou.ACS Nano 8, 10019(2014).

69. Effective mass of a two-dimensional √3 × √3 Ga single atomic layer on Si(111).M. Schnedler, Y. Jiang, K.H. Wu, E.G. Wang, R.E. Dunin-Borkowski, Ph. Ebert. Surface Science 630, 225(2014).

68. Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a √3 × √3-Ga Buffer Layer.He Jie-Hui, Jiang Li-Qun, Qiu Jing-Lan, Chen Lan and Wu Ke-Hui. Chin. Phys. Lett. 31, 128103(2014).

67. Observation of a Flat Band in Silicene.FENG Ya, FENG Bao-Jie, XIE Zhuo-Jin, LI Wen-Bin, LIU Xu, LIU De-Fa, ZHAO Lin, CHEN Lan, ZHOU Xing-Jiang, WU Ke-Hui. Chin. Phys. Lett. 31, 127303(2014).

2013

66. Observation of Dirac Cone Warping and Chirality Effects in Silicene.Baojie Feng, Hui Li, Cheng-Cheng Liu, Tingna Shao, Peng Cheng, Yugui Yao, Sheng Meng, Lan Chen and Kehui Wu.ACS Nano 7, 9049 (2013).

65. d+id' Chiral Superconductivity in Bilayer Silicene.Feng Liu, Cheng-Cheng Liu, Kehui Wu, Fan Yang, Yugui Yao. Physical Review Letters 111, 066804(2013).

64. Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene.Lan Chen, Hui Li, Baojie Feng, Zijing Ding, Jinglan Qiu, Peng Cheng, Kehui Wu and Sheng Meng. Physical Review Letters. 110, 085504 (2013).

63. Parallel field magnetoresistance in topological insulator thin films.C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, and Y. Q. Li.Physical Review B 88, 041307 (2013).

62. Observation of a possible superconducting gap in silicene on Ag(111) surface. Lan Chen, Baojie Feng, and Kehui Wu. Appl. Phys. Lett. 102, 081602 (2013).

61. The reduction and oxidation of Fe2O3(0001) surface investigated by scanning tunneling microscopy.Yuanyuan Tang, Huajun Qin, Kehui Wu, Qinlin Guo, Jiandong Guo. Surf. Sci. 609, 67(2013).

60. Interaction of surface and interface plasmons in extremely thin Al films on Si(111). Huajun Qin, Ying Jiang, Guanhua Zhang, and Kehui Wu. Appl. Phys. Lett. 102, 081602(2013).

2012

59. Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon.Lan Chen, Cheng-Cheng Liu, Baojie Feng, Xiaoyue He, Peng Cheng, Zijing Ding, Sheng Meng, Yugui Yao, and Kehui Wu. Physical Review Letters 109, 056804(2012).

58. Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111).Baojie Feng, Zijing Ding, Sheng Meng, Yugui Yao, Xiaoyue He, Peng Cheng, Lan Chen, and Kehui Wu. Nano Letters 12,3507(2012).

57. Contrast between Surface Plasmon Polariton-Mediated Extraordinary Optical Transmission Behavior in Epitaxial and Polycrystalline Ag Films in the Mid- and Far-Infrared Regimes.Bo-Hong Li, Charlotte E. Sanders, James McIlhargey, Fei Cheng, Changzhi Gu, Guanhua Zhang, Kehui Wu, Jisun Kim, S. Hossein Mousavi, Alexander B. Khanikaev, Yu-Jung Lu, Shangjr Gwo, Gennady Shvets, Chih-Kang Shih, and Xianggang Qiu. Nano Letters 12, 6187(2012).

56. Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy.Ph. Ebert, S. Landrock, Y. Jiang, K. H. Wu, E. G. Wang, and R. E. Dunin-Borkowski.Nano Letters 12, 5845(2012).

55. Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic.fields.Xiuxia Wang, Xiaoyue He, Tong Guan, Jian Liao, Chaojing Lin, Kehui Wu, Yongqing Li and Changgan Zeng. Phyica E 46, 236(2012).

54. Electron transport properties of three-dimensional topological insulators.Yongqing Li, Kehui Wu, Junren Shi, and Xincheng Xie. Front. Phys., 7, 165(2012).

53. Local photocurrent generation in thin films of topological insulator Bi2Se3.C. Kastl, T. Guan, X. Y. He, K.H Wu, Y. Q. Li, and A W. Holleitner. Appl. Phys. Lett. 101, 251110(2012).

52. Tuning the surface plasmon on Ag(111) by organic molecules.Baojie Feng, Huajun Qin, Jiehui He, Xiaoyue He, Peng Cheng, Lan Chen, and Kehui Wu. J. Appl. Phys. 112, 023302 (2012).

51. Surface electronic structure of polar NiO(111) films.Wang, Shuai; Liu, Shuming; Guo, Jiandong, Wu Kehui and Guo Qinglin.Surf. Sci. 606, 378-382(2012).

2011

50. Surface Structural Evolution in Iron Oxide Thin Films.Mingshan Xue, Shuai Wang, Kehui Wu, Jiandong Guo, and Qinlin Guo .Langmuir 27, 11(2011).

49. Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large gate-voltage-tunable chemical potential.G.H. Zhang, H.J. Qin, J. Chen, X.Y. He, Y.Q. Li and K.H. Wu. Adv. Func. Mater. 21, 2351(2011).

48. Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport.J. Chen, X.Y. He, K.H. Wu, Z.Q. Ji, L. Lu, J.R. Shi, J.H. Smet, and Y.Q. Li. Phys. Rev. B 83, 241304(R)(2011).

47. Evolution of the surface structures on SrTiO3(110) tuned by Ti or Sr concentration.Zhiming Wang, Fang Yang, Zhiqiang Zhang, Yuanyuan Tang, Jiagui Feng, Kehui Wu, Qinlin Guo, and Jiandong Guo. Phys. Rev. B 83, 155453(2011).

46. Atomic structure of Sr-induced reconstructions on the Si(100) surface.Jiehui He, Guanhua Zhang, Jiandong Guo, Qinlin Guo, and Kehui Wu. J. Appl. Phys. 109, 083522(2011).

2010

45. Locally probing the screening potential at a metal-semiconductor interface.Ying Jiang, J. D. Guo, Ph. Ebert, E. G. Wang, and Kehui Wu. Phys. Rev. B 81, 033405(2010).

44. Direct determination of the electron-phonon coupling matrix element in a correlated system.Huajun Qin, Junren Shi, Yanwei Cao, Kehui Wu, Jiandi Zhang, E. W. Plummer, J. Wen, G. D. Gu, and Jiandong Guo. Physical Review Letters 105, 256402(2010).

43. Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bi2Se3.J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu,Y. Q. Li, and L. Lu. Physical Review Letters 105， 176602(2010).

42. A laterally tunable plasmon resonance in supported bi-atomic-layer Ag nanodisks. Huajun Qin, Yi Gao, Jing Teng, Hongxing Xu, Kehui Wu and Shiwu Gao.Nano Letters 10, 2961( 2010).

41. Catalyst-like behavior of Si adatoms in the growth of monolayer Al film on Si(111).Jing Teng, Lixin Zhang, Kehui Wu, Ying Jiang, Jiandong Guo, Qinlin Guo, Philipp Ebert, T. Sakurai and Enge Wang.J. Chem. Phys. 133, 014704(2010).

2009

40. Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3.Guanhua Zhang, Huajun Qin, Jing Teng, Jiandong Guo, Qinlin Guo, Xi Dai, Zhong Fang, and Kehui Wu. Appl. Phys. Lett. 95, 053114 (2009).

39. Origin of nanoscale potential fluctuations in two-dimensional semiconductors.S. Landrock, Y. Jiang, K. H. Wu, E. G. Wang, K. Urban, and Ph. Ebert.Appl. Phys. Lett. 95, 072107(2009).

38. Tuning the termination of the SrTiO3(110) surface by Ar+ sputtering.Zhiming Wang, Kehui Wu, Qinlin Guo, and Jiandong Guo.Appl. Phys. Lett. 95, 021912 (2009).

37. Ordered ultra thin ZnO films on metal substrate.Donghui Guo, Mingshan Xue, Qinlin Guo, Kehui Wu, Jiandong Guo, E.G. Wang.Appl. Surf. Sci. 255 (2009) 9015–9019.

36. Epitaxial growth of ZnO films on thin FeO(111) layers.Xue MS, Guo QL, Wu KH, et al. J. Crystal Growth 311,15, 3918-3923(2009).

2008

35. Scanning-induced structure transformation between self- assembled phases of pentacene on Ag/Si(111).Jing Teng, Kehui Wu, Jiandong Guo, and Enge Wang. Surface Science 602, 358(2008).

34. Low temperature growth of epitaxial pentacene films on the Si(111)-(r3xr3)R30-Ag surface .Jing Teng, Kehui Wu, Jiandogn Guo, and E.G. Wang.Surf. Sci. 602, 3510(2008).

33. Tunable surface band gap in MgxZn1-xO thin films.Xue MS, Guo QL, Wu KH and Guo JD. J. Chem. Phys. 129, 234707(2008).

32. Bi and Au-Induced Reconstructions on GaAs(001)-2×4 Surface. Zhe Tang, Shenyuan Yang, Ying Jiang, Wenxin Wang,Jinfeng Jia, Qikun Xue, Enge Wang and Kehui Wu. Chin. Phys. Lett. Vol. 25, 2977(2008).

31.Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)r3xr3-Ag surfaces. Jing Teng, Jiandong Guo, Kehui Wu and E.G. Wang. J. Chem. Phys. 129, 34703(2008).

30. Initial Oxidation and Interfacial Diffusion of Zn on Faceted MgO(111) Films. Mingshan Xue, Qinlin Guo, Kehui Wu, and Jiandong Guo. Langmuir 24, 8760(2008).

2007

29. Importance of quantum size effects in the non-metal to metal transition of two-dimensional Al islands. Ying Jiang, Kehui Wu, Jie Ma, Biao Wu, E. G. Wang, and Ph. Ebert. Physical Review B, 76, 235434(2007).

28. Growing extremely thin bulklike metal film on a semiconductor surface: monolayer Al(111) on Si(111).Ying Jiang, Y.-H. Kim, S. B. Zhang, Philipp Ebert, Shenyuan Yang, Zhe Tang, Kehui Wu, and E. G. Wang. Applied Physics Letters 91, 181902(2007).

27. Temperature and coverage driven condensation of pentacene on the Si(111)r3xr3-Ag surface. Jing Teng, Jiandong Guo, Kehui Wu and Enge Wang. J. Physics Cond. Matt. 19, 356005(2007).

26. Reducing the critical thickness of epitaxial Ag film on the Si(111) substrate by introducing a monolayer Al buffer layer.Zhe Tang, Jing Teng, Ying Jiang, JinFeng Jia, Jiandong Guo, and Kehui Wu. J. Appl. Phys. 102, 053504 (2007).

25. In situ Raman characterization of reversible phase transition in stress-induced amorphous silicon. Kehui Wu, X. Q. Yan, and M. W. Chen.Applied Physics Letters 91, 101903(2007).

24. Quantum size effect induced dilute atomic layers in ultrathin Al films.Ying Jiang, Kehui Wu, Zhe Tang, Ph. Ebert, and E. G. Wang. Physical Review B 76, 035409 (2007).

2006

23. Thickness dependence of the surface plasmon dispersion in ultrathin aluminum films on silicon. Yinghui Yu, Zhe Tang, Ying Jiang, Kehui Wu, and Enge Wang. Surface Science 600(22), 4966( 2006).

22. Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping. Huang XM, Wu KH, Chen MW, et al. Mater. Sci. in Semicond. Proc. 9, 257(2006).

21. The effect of ZrSi2 and SiC doping on the microstructure and Jc–B properties of PIT processed MgB2 tapes. Y. W. Ma, X.P. Zhang, A. X. Xu, X. H. Li, L. Xiao, G. Nishijima, S. Awaji, K. Watanabe, Y. L. Jiao, L. Xiao, X. D. Bai, K. H. Wu, and H. H. Wen. Supercond. Sci. Technol. Vol. 19, pp133–137 (2006).

2005

20. Structural transition of pentacene monolayer on Ga bilayer: From brick-wall structure to herringbone pattern of molecular dimmers. J. Z. Wang, K. H. Wu, W. S. Yang, X. J. Wang, J. T. Sadowski, Y. Fujikawa, and T. Sakurai. Surface Science 579, 80(2005).

19. Reaction at the interface between Si melt and a Ba-doped silica crucible. X. M. Huang, S. J. Koh, K. H. Wu, M. W. Chen, T. Hoshikawa, K. Hoshikawa, and S. Uda. J. Cryst. Growth 277, 154(2005).

18. Thickness dependence of surface plasmon damping and dispersion in ultrathin Ag films. Y. H. Yu, Y. Jiang, Z. Tang, Q. L. Guo, J. F. Jia, Q. K. Xue, K. H. Wu, and E. G. Wang.  Physical Review B 72, 205405(2005).

17. Alkali metals adsorption on the Si(111)-(7x7) surface. Kehui Wu, Y. Fujikawa, Y. Takamua, and T. Sakurai. Chin. J. Phys. 43, 197(2005).

16. Unusual diffusivity and clustering of alkali metals on the Si(111)-7x7 surface. Kehui Wu. Sci. Techno. Adv. Mater. Vol. 6, pp789-194(2005).

15. Dynamics and nano-clustering of alkali metals (Na, K) on the Si(111)-(7x7) surface. Kehui Wu, Y. Fujikawa, T. Briere, V. Kumar, Y. Kawazoe, and T. Sakurai. Ultramicroscopy 105, 32(2005). Journal Cover Page.

14. Step-by-step cooling of a two-dimensional Na gas on the Si(111)-(7x7) surface. Kehui Wu, A. I. Oreshkin, Y. Takamura, Y. Fujikawa, T. Nagao, T.Briere, V. Kumar, Y. Kawazoe, R. F. Dou, Q. K. Xue and T. Sakurai.  Physical Review B Vol 70, 195417(2004).

13. Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth.  R. Z. Bakhtizin, Q. Z. Xue, Q. K. Xue, K. H. Wu and T. Sakurai.  Physics Uspekhi Vol. 47, No. 4, 371 (2004).

12. Na adsorption on the Si(111)-(7x7): From two dimensional gas to nanocluster Array. Kehui Wu, Y. Fujikawa, T. Nagao, Y. Hasegawa, K.S. Nakayama, Q. K. Xue, E. G. Wang, S. B. Zhang, T. Briere, V. Kumar, Y. Kawazoe, and T. Sakurai.  Physical Review Letters. Vol. 91, No. 12, 126101(2003).

11. Layer-by-layer growth of Ag on GaN(0001) surface. Kehui Wu, Q. Z. Xue, R. Z. Bakhtizin, Y. Fujikawa, X. Li, T. Nagao, Q. K. Xue and T. Sakurai. Applied Physics Letters. Vol. 82, No. 9, 1389 (2003).

10. STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE. R. Z. Bakhtizin, K. H. Wu, Q. Z. Xue, Q. K. Xue, T. Nagao, and T. Sakurai. Phys. Low-Dimensional Structures Vol. 3-4, 21 (2003).

9. Tunneling Conductivity Features of the New Reconstructed Phases on the GaN(0001) Surface.  N. S. Maslova, V. I. Panov, K. H. Wu, Q. Z. Xue, T. Nagao, and A. I. Oreshkin.  JETP Letters Vol. 78, No. 9, 578(2003).

8. Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films. Kehui Wu, X. R. Wang, S. Liu, E. G. Wang.  J. Applied Physics Vol. 90, No. 9, 4810 (2001).

7. Microstructure and its effect on field electron emission of grain-size-controlled nanocrystalline diamond films. Kehui Wu, E. G. Wang, Z. X. Cao, Z. L. Wang, X. Jiang.  J. Applied Physics Vol. 88, No. 5, 2967 (2000).[PDF]

6. Investigations of Fuch-Kliewer phonons and hydrogen adsorption of 6H-SiC surfaces by high-resolution electron-energy-loss spectroscopy. J.W. Liu, F.Q. Xie, Q.Z. Zhang, K.H. Wu, X.C. Ma, E.G. Wang, and W.X. Liu. Thin Solid Films Vol. 375, no. 1, 77(2000).

5. Study of field electron emission from nanocrystalline diamond thin films grown from a N2/CH4 microwave plasma. N.S. Xu, J. Chen, S. Z. Deng, K. H. Wu and E. G. Wang. J. Physics D Vol. 33, no. 13, 1572(2000).

4. Nitrogen-incorporated distorted nanocrystalline diamond films: structure and field emission properties. Kehui Wu, E.G.Wang, J.Chen and N.S.Xu.  J. Vac. Sci. Technol. B Vol. 17, No. 3, 1059 (1999).

3. Observation of a new type of field-induced electron emission from a diamond-based heterostructures. J. Chen, S.Z.Deng, N.S.Xu, K. H. Wu and E.G.Wang. Applied Physics Letters. Vol. 75, No. 9, 1323 (1999).

2. Electron resonance cyclotron resonance assist growth of carbon nitrogen films on diamond. Kehui Wu, E. G. Wang, Jian Qing, Guichang Xu. J. Applied Physics Vol. 83, No. 3, 1072 (1998).

1. Highly oriented diamond film growth by atomic force microscopy. J.L.Li, Ge Meng, K. H. Wu and E.G.Wang. Chin. Phys. Lett. Vol. 15, 822 (1998).

榮譽(yù)獎(jiǎng)勵(lì)：

1． 2004年入選第二批引進(jìn)國(guó)外杰出人才。

2． 2004年獲日本文部省“海外派遣研究員”特別獎(jiǎng)。

3． 2004年入選中國(guó)科學(xué)院“百人計(jì)劃”。

4． 2009年獲北京市科技獎(jiǎng)一等獎(jiǎng)。

5． 2011年中國(guó)科學(xué)院杰出科技成就獎(jiǎng)（突出貢獻(xiàn)者）。

學(xué)術(shù)交流：

1、2014. 4 俄羅斯莫斯科大學(xué)的Andrey Oreshkin教授來(lái)我們研究組進(jìn)行為期三個(gè)月的訪問(wèn)交流。

2、2013.6 吳克輝研究員受邀參加第三屆國(guó)際硅烯會(huì)議并作特邀報(bào)告

3、2013.3 吳克輝參加美國(guó)物理學(xué)會(huì)春季年會(huì)并作口頭報(bào)告。

4、2012.9月 吳克輝研究員受邀在中國(guó)物理學(xué)會(huì)秋季會(huì)議（廣州）、第13屆全國(guó)STM會(huì)議(西安）并作邀請(qǐng)報(bào)告。

媒體報(bào)道：

1、2013.3 Nature China 報(bào)道在硅烯方面的研究突破。

2、2013.3 物理所和中國(guó)科學(xué)院網(wǎng)站報(bào)道在硅烯的電子性質(zhì)方面的研究進(jìn)展。

3、2012.8月 《科學(xué)網(wǎng)》報(bào)道在硅烯研究方面的突破。

4、2012.8月 中科院網(wǎng)站報(bào)道在硅烯研究方面的進(jìn)展。

5、2011年7月：物理所及科學(xué)院網(wǎng)站報(bào)道在拓?fù)浣^緣體方面的工作。